All MOSFET. AOD8N25 Datasheet

 

AOD8N25 Datasheet and Replacement


   Type Designator: AOD8N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: TO-252
 

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AOD8N25 Datasheet (PDF)

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AOD8N25

AOD8N25/AOI8N25250V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD8N25 & AOI8N25 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 300V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 8Apopular AC-DC applications. RDS(ON) (at VGS=10V)

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AOD8N25

isc N-Channel MOSFET Transistor AOD8N25FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R =0.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: AOD603A , AOD607 , AOD609 , AOD6N50 , AOD7N60 , AOD7N65 , AOD7S60 , AOD7S65 , IRF830 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 , AOH3110 , AOI11S60 , AOI1N60 .

History: NVMTS0D6N04C

Keywords - AOD8N25 MOSFET datasheet

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