AOD8N25 MOSFET Datasheet: N-Ch, 250V, 8A. Full specification with pinout and replacement list

AOD8N25 Specs and Replacement

Type Designator: AOD8N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm

Package: TO-252

AOD8N25 substitution

- MOSFET ⓘ Cross-Reference Search

AOD8N25 datasheet

..1. Size:374K aosemi
aod8n25 aoi8n25.pdf pdf_icon

AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 300V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 8A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:374K aosemi
aod8n25.pdf pdf_icon

..3. Size:265K inchange semiconductor
aod8n25.pdf pdf_icon

isc N-Channel MOSFET Transistor AOD8N25 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R =0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: AOD603A, AOD607, AOD609, AOD6N50, AOD7N60, AOD7N65, AOD7S60, AOD7S65, 2N60, AOD9N40, AOD9N50, AOD9N52, AOD9T40P, AOH3106, AOH3110, AOI11S60, AOI1N60