AOD9N50 Todos los transistores

 ..1. Size:388K  aosemi
 aod9n50 aoi9n50.pdf

AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:388K  aosemi
 aod9n50.pdf

AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..3. Size:266K  inchange semiconductor
 aod9n50.pdf

isc N-Channel MOSFET Transistor AOD9N50 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.86 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

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 aod9n52.pdf

AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 620V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 9A DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:208K  inchange semiconductor
 aod9n52.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOD9N52 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.1. Size:261K  aosemi
 aod9n40.pdf

AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150 VDS levels of performance and robustness in popular AC-DC ID (at VGS=10V) 8A applications.By providing low RDS(on), Ciss and Crss along

 9.2. Size:265K  inchange semiconductor
 aod9n40.pdf

isc N-Channel MOSFET Transistor AOD9N40 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose