AOD9N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD9N50
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 178 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19.5 nC
Время нарастания (tr): 44 ns
Выходная емкость (Cd): 98 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TO-252
AOD9N50 Datasheet (PDF)
aod9n50.pdf
AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)
aod9n50.pdf
isc N-Channel MOSFET Transistor AOD9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.86(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod9n52.pdf
AOD9N52520V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N52 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 620V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 9ADC applications. RDS(ON) (at VGS=10V)
aod9n52.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD9N52FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
aod9n40.pdf
AOD9N40400V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150 VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V) 8Aapplications.By providing low RDS(on), Ciss and Crss along
aod9n40.pdf
isc N-Channel MOSFET Transistor AOD9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
