AOD9N50 MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

AOD9N50 Specs and Replacement

Type Designator: AOD9N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-252

AOD9N50 substitution

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AOD9N50 datasheet

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AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒

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..3. Size:266K inchange semiconductor
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isc N-Channel MOSFET Transistor AOD9N50 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.86 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

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AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 620V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 9A DC applications. RDS(ON) (at VGS=10V) ... See More ⇒