AOI478 Todos los transistores

 

AOI478 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOI478
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-251A

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AOI478 Datasheet (PDF)

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aod478 aoi478.pdf

AOI478
AOI478

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..2. Size:422K  aosemi
aoi478.pdf

AOI478
AOI478

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..3. Size:274K  inchange semiconductor
aoi478.pdf

AOI478
AOI478

isc N-Channel MOSFET Transistor AOI478FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:158K  aosemi
aoi472a.pdf

AOI478
AOI478

AOI472AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOI472A is fabricated with SDMOSTM trench VDS (V) =25Vtechnology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V)ID = 50Acontrolled switching behavior. This universal technology (VGS = 10V)RDS(ON)

Otros transistores... AOI418 , AOI4184 , AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , AOI468 , IRF3205 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 .

 

 
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