AOI478 MOSFET Datasheet: N-Ch, 100V, 11A. Full specification with pinout and replacement list

AOI478 Specs and Replacement

   Type Designator: AOI478
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-251A

AOI478 substitution

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AOI478 datasheet

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AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 11A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOI478 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

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AOI472A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOI472A is fabricated with SDMOSTM trench VDS (V) =25V technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V) ID = 50A controlled switching behavior. This universal technology (VGS = 10V) RDS(ON) ... See More ⇒

Detailed specifications: AOI418 , AOI4184 , AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , AOI468 , IRF3205 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 .