AOI478 - описание и поиск аналогов

AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 11A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 11A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOI478 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

AOI472A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOI472A is fabricated with SDMOSTM trench VDS (V) =25V technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V) ID = 50A controlled switching behavior. This universal technology (VGS = 10V) RDS(ON)