AOI7N60 Todos los transistores

 ..1. Size:387K  aosemi
 aoi7n60.pdf

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:387K  aosemi
 aod7n60 aoi7n60.pdf

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..3. Size:274K  inchange semiconductor
 aoi7n60.pdf

isc N-Channel MOSFET Transistor AOI7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.1. Size:461K  aosemi
 aod7n65 aoi7n65.pdf

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:461K  aosemi
 aoi7n65.pdf

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 8.3. Size:274K  inchange semiconductor
 aoi7n65.pdf

isc N-Channel MOSFET Transistor AOI7N65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =1.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos