Справочник MOSFET. AOI7N60

 

AOI7N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOI7N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 178 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 88 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: TO-251A
 

 Аналог (замена) для AOI7N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOI7N60 Datasheet (PDF)

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AOI7N60

AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:274K  inchange semiconductor
 aoi7n60.pdf pdf_icon

AOI7N60

isc N-Channel MOSFET Transistor AOI7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.1. Size:461K  aosemi
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AOI7N60

AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:274K  inchange semiconductor
 aoi7n65.pdf pdf_icon

AOI7N60

isc N-Channel MOSFET Transistor AOI7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , IRF630 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 .

 

 
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