AOI7N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOI7N65 Datasheet (PDF)

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AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

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isc N-Channel MOSFET Transistor AOI7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

8.2. Size:274K inchange semiconductor
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isc N-Channel MOSFET Transistor AOI7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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