AOI7N65 Todos los transistores

 

AOI7N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOI7N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.56 Ohm
   Paquete / Cubierta: TO-251A
 

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AOI7N65 Datasheet (PDF)

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AOI7N65

AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:274K  inchange semiconductor
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AOI7N65

isc N-Channel MOSFET Transistor AOI7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:387K  aosemi
aoi7n60.pdf pdf_icon

AOI7N65

AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:274K  inchange semiconductor
aoi7n60.pdf pdf_icon

AOI7N65

isc N-Channel MOSFET Transistor AOI7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , 10N60 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 .

History: CS630 | QM04N60F | IRF4104PBF | 2SK1905 | IXFH28N60P3 | H4946S | APT50M85B2VR

 

 
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