AOI7N65 Todos los transistores

 

AOI7N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOI7N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 86 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.56 Ohm

Encapsulados: TO-251A

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AOI7N65 datasheet

 ..1. Size:461K  aosemi
aod7n65 aoi7n65.pdf pdf_icon

AOI7N65

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:461K  aosemi
aoi7n65.pdf pdf_icon

AOI7N65

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..3. Size:274K  inchange semiconductor
aoi7n65.pdf pdf_icon

AOI7N65

isc N-Channel MOSFET Transistor AOI7N65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =1.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.1. Size:387K  aosemi
aoi7n60.pdf pdf_icon

AOI7N65

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V)

Otros transistores... AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , IRFP260N , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 .

History: TSM7N60CI

 

 

 


History: TSM7N60CI

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