All MOSFET. AOI7N65 Datasheet

 

AOI7N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOI7N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 86 pF

Maximum Drain-Source On-State Resistance (Rds): 1.56 Ohm

Package: TO-251A

AOI7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI7N65 Datasheet (PDF)

1.1. aoi7n65.pdf Size:461K _aosemi

AOI7N65 AOI7N65

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.56Ω By providing low RDS(on), Ciss and Crss along with

4.1. aoi7n60.pdf Size:387K _aosemi

AOI7N65 AOI7N65

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.3Ω By providing low RDS(on), Ciss and Crss along with

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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