AOI7N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 178 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 43 nS
Drain-Source Capacitance (Cd): 86 pF
Maximum Drain-Source On-State Resistance (Rds): 1.56 Ohm
Package: TO-251A
AOI7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI7N65 Datasheet (PDF)
0.1. aoi7n65.pdf 
Size:461K _aosemi
AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.56Ω By providing low RDS(on), Ciss and Crss along with
8.1. aoi7n60.pdf Size:387K _aosemi
AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.3Ω By providing low RDS(on), Ciss and Crss along with
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