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AOK10N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK10N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 403 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.98 Ohm
   Paquete / Cubierta: TO-247
 

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AOK10N90 Datasheet (PDF)

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AOK10N90

AOK10N90900V,10A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK10N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK10N90

isc N-Channel MOSFET Transistor AOK10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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AOK10N90

AOK10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

Otros transistores... AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , IRFB4227 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 .

History: NCE60N640K | RJK1535DPE | CED02N6A | FJ4B0124 | P8010BIS | 7N65KG-TF3-T | UML2502

 

 
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