All MOSFET. AOK10N90 Datasheet

 

AOK10N90 Datasheet and Replacement


   Type Designator: AOK10N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 403 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm
   Package: TO-247
 

 AOK10N90 substitution

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AOK10N90 Datasheet (PDF)

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AOK10N90

AOK10N90900V,10A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK10N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK10N90

isc N-Channel MOSFET Transistor AOK10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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AOK10N90

AOK10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

Datasheet: AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , IRFB4227 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 .

History: AOI8N25 | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S

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