AOK10N90900V,10A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK10N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOK10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOK10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t