AOK40N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOK40N30300V,40A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK40N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOK40N30FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

AOK40B60D1TM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo

AOK40B120P1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) IC (TC=100C) 40A High short-circuit ruggedness VCE(sat) (TJ=25C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

AOK40B120H1TM1200V, 40A AlphaIGBTWith Soft and Fast Recovery Anti-parallel DiodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

AOK40B120N1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) and VF IC (TC=100 40AC) High short-circuit ruggedness VCE(sat) (TJ=25 1.97VC) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

AOK40B65M3TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencie

AOK40B120M1TM1200V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

AOK40B65HQ2TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications D

AOK40B65HQ3TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100 40AC) Low QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC application fo

AOK40B60DTM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

AOK40B65H1TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur