AOK40N30 Todos los transistores

 ..1. Size:320K  aosemi
 aok40n30.pdf

AOK40N30 300V,40A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK40N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:378K  inchange semiconductor
 aok40n30.pdf

isc N-Channel MOSFET Transistor AOK40N30 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.1. Size:535K  1
 aok40b65h2al.pdf

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 9.2. Size:711K  aosemi
 aok40b60d1.pdf

AOK40B60D1 TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 9.3. Size:1032K  aosemi
 aok40b65h2al.pdf

AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo

 9.4. Size:609K  aosemi
 aok40b120p1.pdf

AOK40B120P1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) IC (TC=100 C) 40A High short-circuit ruggedness VCE(sat) (TJ=25 C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

 9.5. Size:842K  aosemi
 aok40b120h1.pdf

AOK40B120H1 TM 1200V, 40A AlphaIGBT With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

 9.6. Size:636K  aosemi
 aok40b120n1.pdf

AOK40B120N1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) and VF IC (TC=100 40A C) High short-circuit ruggedness VCE(sat) (TJ=25 1.97V C) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

 9.7. Size:997K  aosemi
 aok40b65m3.pdf

AOK40B65M3 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencie

 9.8. Size:995K  aosemi
 aok40b120m1.pdf

AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

 9.9. Size:569K  aosemi
 aok40b65hq1.pdf

AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U

 9.10. Size:564K  aosemi
 aok40b65hq2.pdf

AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D

 9.11. Size:565K  aosemi
 aok40b65hq3.pdf

AOK40B65HQ3 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 40A C) Low Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC application fo

 9.12. Size:714K  aosemi
 aok40b60d.pdf

AOK40B60D TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

 9.13. Size:995K  aosemi
 aok40b65h1.pdf

AOK40B65H1 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur