AOK40N30 - описание и поиск аналогов

AOK40N30 300V,40A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK40N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOK40N30 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

AOK40B60D1 TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo

AOK40B120P1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) IC (TC=100 C) 40A High short-circuit ruggedness VCE(sat) (TJ=25 C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

AOK40B120H1 TM 1200V, 40A AlphaIGBT With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

AOK40B120N1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) and VF IC (TC=100 40A C) High short-circuit ruggedness VCE(sat) (TJ=25 1.97V C) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

AOK40B65M3 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencie

AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U

AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D

AOK40B65HQ3 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 40A C) Low Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC application fo

AOK40B60D TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

AOK40B65H1 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur