AOK40N30 Specs and Replacement
Type Designator: AOK40N30
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 166 nS
Cossⓘ -
Output Capacitance: 405 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-247
- MOSFET ⓘ Cross-Reference Search
AOK40N30 datasheet
..1. Size:320K aosemi
aok40n30.pdf 
AOK40N30 300V,40A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK40N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
..2. Size:378K inchange semiconductor
aok40n30.pdf 
isc N-Channel MOSFET Transistor AOK40N30 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
9.1. Size:535K 1
aok40b65h2al.pdf 
AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu... See More ⇒
9.2. Size:711K aosemi
aok40b60d1.pdf 
AOK40B60D1 TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒
9.3. Size:1032K aosemi
aok40b65h2al.pdf 
AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo... See More ⇒
9.4. Size:609K aosemi
aok40b120p1.pdf 
AOK40B120P1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) IC (TC=100 C) 40A High short-circuit ruggedness VCE(sat) (TJ=25 C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a... See More ⇒
9.5. Size:842K aosemi
aok40b120h1.pdf 
AOK40B120H1 TM 1200V, 40A AlphaIGBT With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low... See More ⇒
9.6. Size:636K aosemi
aok40b120n1.pdf 
AOK40B120N1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) and VF IC (TC=100 40A C) High short-circuit ruggedness VCE(sat) (TJ=25 1.97V C) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e... See More ⇒
9.7. Size:997K aosemi
aok40b65m3.pdf 
AOK40B65M3 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencie... See More ⇒
9.8. Size:995K aosemi
aok40b120m1.pdf 
AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o... See More ⇒
9.9. Size:569K aosemi
aok40b65hq1.pdf 
AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U... See More ⇒
9.10. Size:564K aosemi
aok40b65hq2.pdf 
AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D... See More ⇒
9.11. Size:565K aosemi
aok40b65hq3.pdf 
AOK40B65HQ3 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 40A C) Low Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC application fo... See More ⇒
9.12. Size:714K aosemi
aok40b60d.pdf 
AOK40B60D TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to... See More ⇒
9.13. Size:995K aosemi
aok40b65h1.pdf 
AOK40B65H1 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur... See More ⇒
Detailed specifications: AOI9N50, AOK10N90, AOK18N65, AOK20N60, AOK20S60, AOK22N50, AOK27S60, AOK29S50, IRFP250N, AOK42S60, AOK53S60, AOK5N100, AOK60N30, AOK8N80, AOK9N90, AOL1202, AOL1208
Keywords - AOK40N30 MOSFET specs
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