AOK40N30 PDF and Equivalents Search

 

AOK40N30 Specs and Replacement

Type Designator: AOK40N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 166 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-247

AOK40N30 substitution

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AOK40N30 datasheet

 ..1. Size:320K  aosemi
aok40n30.pdf pdf_icon

AOK40N30

AOK40N30 300V,40A N-Channel MOSFET General Description Product Summary VDS 350@150 The AOK40N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:378K  inchange semiconductor
aok40n30.pdf pdf_icon

AOK40N30

isc N-Channel MOSFET Transistor AOK40N30 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 9.1. Size:535K  1
aok40b65h2al.pdf pdf_icon

AOK40N30

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu... See More ⇒

 9.2. Size:711K  aosemi
aok40b60d1.pdf pdf_icon

AOK40N30

AOK40B60D1 TM 600V, 40A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 40A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒

Detailed specifications: AOI9N50, AOK10N90, AOK18N65, AOK20N60, AOK20S60, AOK22N50, AOK27S60, AOK29S50, IRFP250N, AOK42S60, AOK53S60, AOK5N100, AOK60N30, AOK8N80, AOK9N90, AOL1202, AOL1208

Keywords - AOK40N30 MOSFET specs

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