AON1606 Todos los transistores

 ..1. Size:236K  aosemi
 aon1606.pdf

AON1606 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7A ideal for load switch applications. RDS(ON) (at VGS =4.5V)

 8.1. Size:264K  aosemi
 aon1605.pdf

AON1605 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7A ideal for load switch applications. RDS(ON) (at VGS =-4.5V)

 9.1. Size:217K  aosemi
 aon1634.pdf

AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

 9.2. Size:231K  aosemi
 aon1610.pdf

AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.3. Size:236K  aosemi
 aon1620.pdf

AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.4. Size:220K  aosemi
 aon1611.pdf

AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)