AON1606 - аналоги, параметры транзистора - Справочник транзисторов

AON1606 даташит

..1. Size:236K aosemi
aon1606.pdf pdf_icon

AON1606 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7A ideal for load switch applications. RDS(ON) (at VGS =4.5V)

8.1. Size:264K aosemi
aon1605.pdf pdf_icon

AON1605 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7A ideal for load switch applications. RDS(ON) (at VGS =-4.5V)

9.1. Size:217K aosemi
aon1634.pdf pdf_icon

AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

9.2. Size:231K aosemi
aon1610.pdf pdf_icon

AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)