All MOSFET. AON1606 Datasheet

 

AON1606 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON1606
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.85 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 12.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.275 Ohm
   Package: DFN1.0X0.6A

 AON1606 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON1606 Datasheet (PDF)

 ..1. Size:236K  aosemi
 aon1606.pdf

AON1606 AON1606

AON160620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON1606 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7Aideal for load switch applications. RDS(ON) (at VGS =4.5V)

 8.1. Size:264K  aosemi
 aon1605.pdf

AON1606 AON1606

AON160520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON1605 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7Aideal for load switch applications. RDS(ON) (at VGS =-4.5V)

 9.1. Size:217K  aosemi
 aon1634.pdf

AON1606 AON1606

AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

 9.2. Size:231K  aosemi
 aon1610.pdf

AON1606 AON1606

AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.3. Size:236K  aosemi
 aon1620.pdf

AON1606 AON1606

AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.4. Size:220K  aosemi
 aon1611.pdf

AON1606 AON1606

AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SMK0860P

 

 
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