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AON2701 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON2701
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: DFN2X2
 

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Principales características: AON2701

 ..1. Size:222K  aosemi
 aon2701.pdf pdf_icon

AON2701

AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON)

 8.1. Size:393K  aosemi
 aon2705.pdf pdf_icon

AON2701

AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.2. Size:301K  aosemi
 aon2707.pdf pdf_icon

AON2701

AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

Otros transistores... AON2405 , AON2406 , AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , IRF2807 , AON2705 , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 .

 

 
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