AON2701 Datasheet and Replacement. Cross Reference Search

AON2701 Datasheet (PDF)

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AON2701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON2701/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V)Schottky diode is provided to facilitate the RDS(ON)

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AON270530V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2705 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

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AON270730V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2707 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

Datasheet: AON2405 , AON2406 , AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , IRFB31N20D , AON2705 , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 .