AON2701 PDF and Equivalents Search

 

AON2701 Specs and Replacement

Type Designator: AON2701

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: DFN2X2

AON2701 substitution

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AON2701 datasheet

 ..1. Size:222K  aosemi
 aon2701.pdf pdf_icon

AON2701

AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON) ... See More ⇒

 8.1. Size:393K  aosemi
 aon2705.pdf pdf_icon

AON2701

AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒

 8.2. Size:301K  aosemi
 aon2707.pdf pdf_icon

AON2701

AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AON2405, AON2406, AON2407, AON2408, AON2409, AON2410, AON2411, AON2420, IRF2807, AON2705, AON2707, AON2800, AON2801, AON2802, AON2803, AON2809, AON2810

Keywords - AON2701 MOSFET specs

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