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AON2707 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON2707
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 42 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
   Paquete / Cubierta: DFN2X2
 

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AON2707 Datasheet (PDF)

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AON2707

AON270730V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2707 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.1. Size:393K  aosemi
 aon2705.pdf pdf_icon

AON2707

AON270530V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2705 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.2. Size:222K  aosemi
 aon2701.pdf pdf_icon

AON2707

AON2701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON2701/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V)Schottky diode is provided to facilitate the RDS(ON)

Otros transistores... AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , AON2705 , AON6380 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 , AON3402 .

History: 2SK1669 | 2SK2411 | 2N60A | SI1012R | AONS21309C | SSG4536C

 

 
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