AON2707 Todos los transistores

 

AON2707 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON2707

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm

Encapsulados: DFN2X2

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AON2707 datasheet

 ..1. Size:301K  aosemi
 aon2707.pdf pdf_icon

AON2707

AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.1. Size:393K  aosemi
 aon2705.pdf pdf_icon

AON2707

AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.2. Size:222K  aosemi
 aon2701.pdf pdf_icon

AON2707

AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON)

Otros transistores... AON2407, AON2408, AON2409, AON2410, AON2411, AON2420, AON2701, AON2705, IRFZ24N, AON2800, AON2801, AON2802, AON2803, AON2809, AON2810, AON2812, AON3402

 

 

 

 

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