AON2707 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON2707
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
Paquete / Cubierta: DFN2X2
Búsqueda de reemplazo de AON2707 MOSFET
AON2707 Datasheet (PDF)
aon2707.pdf

AON270730V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2707 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)
aon2705.pdf

AON270530V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2705 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)
aon2701.pdf

AON2701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON2701/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V)Schottky diode is provided to facilitate the RDS(ON)
Otros transistores... AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , AON2705 , 8N60 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 , AON3402 .
History: NTK3134NT1G | H8N65P | HY3007PS | SM4025PSUC | SSF4703DC | AP2302GN | SDF120NA20HI
History: NTK3134NT1G | H8N65P | HY3007PS | SM4025PSUC | SSF4703DC | AP2302GN | SDF120NA20HI



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