AON2707 Datasheet and Replacement
Type Designator: AON2707
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: DFN2X2
AON2707 Datasheet (PDF)
aon2707.pdf

AON270730V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2707 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)
aon2705.pdf

AON270530V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2705 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)
aon2701.pdf

AON2701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON2701/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V)Schottky diode is provided to facilitate the RDS(ON)
Datasheet: AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , AON2705 , AON6380 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 , AON3402 .
History: SWP058R72E7T | FHF10N80A
Keywords - AON2707 MOSFET datasheet
AON2707 cross reference
AON2707 equivalent finder
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History: SWP058R72E7T | FHF10N80A



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