AON2812 Todos los transistores

 ..1. Size:243K  aosemi
 aon2812.pdf

AON2812 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:250K  aosemi
 aon2810.pdf

AON2810 30V Dual N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:262K  aosemi
 aon2800.pdf

AON2800 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 4.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
 aon2880.pdf

AON2880 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2880 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 7A extremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

 9.3. Size:171K  aosemi
 aon2801.pdf

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 9.4. Size:230K  aosemi
 aon2809.pdf

AON2809 12V Dual P-Channel MOSFET General Description Product Summary VDS The AON2809 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.5. Size:236K  aosemi
 aon2803.pdf

AON2803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8A with gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)

 9.6. Size:218K  aosemi
 aon2802.pdf

AON2802 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)