AON2812 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON2812
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Paquete / Cubierta: DFN2X2
Búsqueda de reemplazo de AON2812 MOSFET
AON2812 datasheet
aon2812.pdf
AON2812 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)
aon2810.pdf
AON2810 30V Dual N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)
aon2800.pdf
AON2800 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 4.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
aon2880.pdf
AON2880 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON2880 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 7A extremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)
Otros transistores... AON2705 , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , STP65NF06 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , AON3816 , AON3818 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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