All MOSFET. AON2812 Datasheet

 

AON2812 Datasheet and Replacement


   Type Designator: AON2812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: DFN2X2
 

 AON2812 substitution

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AON2812 Datasheet (PDF)

 ..1. Size:243K  aosemi
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AON2812

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:250K  aosemi
aon2810.pdf pdf_icon

AON2812

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:262K  aosemi
aon2800.pdf pdf_icon

AON2812

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
aon2880.pdf pdf_icon

AON2812

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP4424GM

Keywords - AON2812 MOSFET datasheet

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