Справочник MOSFET. AON2812

 

AON2812 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON2812
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
   Тип корпуса: DFN2X2

 Аналог (замена) для AON2812

 

 

AON2812 Datasheet (PDF)

 ..1. Size:243K  aosemi
 aon2812.pdf

AON2812 AON2812

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:250K  aosemi
 aon2810.pdf

AON2812 AON2812

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:262K  aosemi
 aon2800.pdf

AON2812 AON2812

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
 aon2880.pdf

AON2812 AON2812

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

 9.3. Size:171K  aosemi
 aon2801.pdf

AON2812 AON2812

AON2801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON2801/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 9.4. Size:230K  aosemi
 aon2809.pdf

AON2812 AON2812

AON280912V Dual P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2809 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.5. Size:236K  aosemi
 aon2803.pdf

AON2812 AON2812

AON280320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2803 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8Awith gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)

 9.6. Size:218K  aosemi
 aon2802.pdf

AON2812 AON2812

AON280230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON2802 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

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