AON3419 Todos los transistores

 

AON3419 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3419

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: DFN3X3

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AON3419 datasheet

 ..1. Size:227K  aosemi
 aon3419.pdf pdf_icon

AON3419

AON3419 30V P-Channel MOSFET General Description Product Summary VDS The AON3419 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -10A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 8.1. Size:310K  1
 aon3414.pdf pdf_icon

AON3419

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 8.2. Size:310K  aosemi
 aon3414.pdf pdf_icon

AON3419

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:418K  aosemi
 aon3406.pdf pdf_icon

AON3419

AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

MOSTRAR MÁS

Otros transistores... AON2800, AON2801, AON2802, AON2803, AON2809, AON2810, AON2812, AON3402, 7N60, AON3611, AON3613, AON3806, AON3814, AON3816, AON3818, AON4420L, AON4421

 

 

 


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