AON3419 MOSFET Datasheet: P-Ch, 30V, 10A. Full specification with pinout and replacement list

AON3419 Specs and Replacement

Type Designator: AON3419

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: DFN3X3

AON3419 substitution

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AON3419 datasheet

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AON3419 30V P-Channel MOSFET General Description Product Summary VDS The AON3419 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -10A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒

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AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒