Справочник MOSFET. AON3419

 

AON3419 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON3419
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: DFN3X3

 Аналог (замена) для AON3419

 

 

AON3419 Datasheet (PDF)

 ..1. Size:227K  aosemi
 aon3419.pdf

AON3419 AON3419

AON341930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON3419 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -10Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 8.1. Size:310K  1
 aon3414.pdf

AON3419 AON3419

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 8.2. Size:310K  aosemi
 aon3414.pdf

AON3419 AON3419

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:418K  aosemi
 aon3406.pdf

AON3419 AON3419

AON340630V N-Channel MOSFETGeneral Description FeaturesThe AON3406 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

 9.2. Size:109K  aosemi
 aon3408.pdf

AON3419 AON3419

AON340830V N-Channel MOSFETGeneral Description Product SummaryFeaturesThe AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30VDSprovide excellent RDS(ON) and low gate charge. ThisIDD 9.2A (VGS 10V)I ==11A (VGS ==10V)device is suitable for use as a load switch or in PWMRDS(ON)

 9.3. Size:106K  aosemi
 aon3402.pdf

AON3419 AON3419

AON340220V N-Channel MOSFETGeneral Description Product SummaryThe AON3402 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 12.6A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileRDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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