AON3814 Todos los transistores

 

AON3814 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3814

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.1 V

Tiempo de elevación (tr): 600 nS

Conductancia de drenaje-sustrato (Cd): 155 pF

Resistencia drenaje-fuente RDS(on): 0.017 Ohm

Empaquetado / Estuche: DFN3x3

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AON3814 Datasheet (PDF)

1.1. aon3814.pdf Size:263K _aosemi

AON3814
AON3814

AON3814 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 17mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 18.5m

4.1. aon3816.pdf Size:264K _aosemi

AON3814
AON3814

AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 22mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 23mΩ

4.2. aon3818.pdf Size:345K _aosemi

AON3814
AON3814

AON3818 24V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 24V • Low RDS(ON) ID (at VGS=4.5V) 8A • Low Gate Charge RDS(ON) (at VGS=4.5V) < 13.5mΩ • ESD protection RDS(ON) (at VGS=4.0V) < 14mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=3.7V) < 15mΩ RDS(ON) (at VGS=3.1V) < 17mΩ RDS(ON) (at

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