AON3814 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON3814
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.5 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.1 V
Tiempo de elevación (tr): 600 nS
Conductancia de drenaje-sustrato (Cd): 155 pF
Resistencia drenaje-fuente RDS(on): 0.017 Ohm
Empaquetado / Estuche: DFN3x3
Búsqueda de reemplazo de MOSFET AON3814
AON3814 Datasheet (PDF)
1.1. aon3814.pdf 
Size:263K _aosemi
AON3814 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 17mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 18.5m
4.1. aon3816.pdf Size:264K _aosemi
AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 22mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 23mΩ
4.2. aon3818.pdf Size:345K _aosemi
AON3818 24V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 24V • Low RDS(ON) ID (at VGS=4.5V) 8A • Low Gate Charge RDS(ON) (at VGS=4.5V) < 13.5mΩ • ESD protection RDS(ON) (at VGS=4.0V) < 14mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=3.7V) < 15mΩ RDS(ON) (at VGS=3.1V) < 17mΩ RDS(ON) (at
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