AON3814 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON3814
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 600 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: DFN3X3

Búsqueda de reemplazo de MOSFET AON3814

AON3814 Datasheet (PDF)

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aon3814.pdf

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

..2. Size:263K aosemi
aon3814.pdf

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aon3816.pdf

AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

8.2. Size:345K aosemi
aon3818.pdf

AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

9.1. Size:330K aosemi
aon3820.pdf

AON382024V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

9.2. Size:232K aosemi
aon3806.pdf

AON380620V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON3806 uses advanced trench technology to 20Vprovide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6Aoperation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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