Справочник MOSFET. AON3814

 

AON3814 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON3814
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 600 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: DFN3X3

 Аналог (замена) для AON3814

 

 

AON3814 Datasheet (PDF)

 ..1. Size:263K  1
 aon3814.pdf

AON3814 AON3814

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

 ..2. Size:263K  aosemi
 aon3814.pdf

AON3814 AON3814

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

 8.1. Size:264K  aosemi
 aon3816.pdf

AON3814 AON3814

AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

 8.2. Size:345K  aosemi
 aon3818.pdf

AON3814 AON3814

AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.1. Size:330K  aosemi
 aon3820.pdf

AON3814 AON3814

AON382024V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.2. Size:232K  aosemi
 aon3806.pdf

AON3814 AON3814

AON380620V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON3806 uses advanced trench technology to 20Vprovide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6Aoperation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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