AON3814 Specs and Replacement
Type Designator: AON3814
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 600 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN3X3
AON3814 substitution
- MOSFET ⓘ Cross-Reference Search
AON3814 datasheet
aon3816.pdf
AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) ... See More ⇒
aon3818.pdf
AON3818 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒
Detailed specifications: AON2809, AON2810, AON2812, AON3402, AON3419, AON3611, AON3613, AON3806, IRLB3034, AON3816, AON3818, AON4420L, AON4421, AON4605, AON4703, AON4803, AON4805L
Keywords - AON3814 MOSFET specs
AON3814 cross reference
AON3814 equivalent finder
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AON3814 substitution
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