AON4807 Todos los transistores

 

AON4807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON4807

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.9 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.3 V

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.068 Ohm

Empaquetado / Estuche: DFN2x3

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AON4807 Datasheet (PDF)

1.1. aon4807.pdf Size:302K _aosemi

AON4807
AON4807

AON4807 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) < 68mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 105mΩ DFN 3x2A D1 D2 Top Vie

4.1. aon4803.pdf Size:308K _aosemi

AON4807
AON4807

AON4803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -3.4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) < 90mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 120mΩ RDS(ON) (at VGS =-1

4.2. aon4805l.pdf Size:159K _aosemi

AON4807
AON4807

AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4805L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V) operation with gate voltage as low as 1.8V. This RDS(ON) < 65mΩ (VGS = -4.5V) device is suitable for use as a load switch or in PWM RDS(ON) < 85mΩ (VGS

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