AON4807 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON4807  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm

Encapsulados: DFN2X3

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AON4807 datasheet

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 aon4807.pdf pdf_icon

AON4807

AON4807 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 8.1. Size:308K  aosemi
 aon4803.pdf pdf_icon

AON4807

AON4803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -3.4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 8.2. Size:159K  aosemi
 aon4805l.pdf pdf_icon

AON4807

AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4805L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V) operation with gate voltage as low as 1.8V. This RDS(ON)

Otros transistores... AON3816, AON3818, AON4420L, AON4421, AON4605, AON4703, AON4803, AON4805L, IRF830, AON5802B, AON5810, AON5820, AON6202, AON6204, AON6210, AON6230, AON6232