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AON4807 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON4807
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: DFN2X3
 

 Búsqueda de reemplazo de AON4807 MOSFET

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Principales características: AON4807

 ..1. Size:302K  aosemi
 aon4807.pdf pdf_icon

AON4807

AON4807 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 8.1. Size:308K  aosemi
 aon4803.pdf pdf_icon

AON4807

AON4803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -3.4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 8.2. Size:159K  aosemi
 aon4805l.pdf pdf_icon

AON4807

AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4805L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V) operation with gate voltage as low as 1.8V. This RDS(ON)

Otros transistores... AON3816 , AON3818 , AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , AON4805L , AO4407A , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 , AON6210 , AON6230 , AON6232 .

History: SI7272DP | AON4421

 

 
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