AON4807 Specs and Replacement

Type Designator: AON4807

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: DFN2X3

AON4807 substitution

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AON4807 datasheet

 ..1. Size:302K  aosemi
 aon4807.pdf pdf_icon

AON4807

AON4807 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒

 8.1. Size:308K  aosemi
 aon4803.pdf pdf_icon

AON4807

AON4803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -3.4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) ... See More ⇒

 8.2. Size:159K  aosemi
 aon4805l.pdf pdf_icon

AON4807

AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4805L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V) operation with gate voltage as low as 1.8V. This RDS(ON) ... See More ⇒

Detailed specifications: AON3816, AON3818, AON4420L, AON4421, AON4605, AON4703, AON4803, AON4805L, AO4407A, AON5802B, AON5810, AON5820, AON6202, AON6204, AON6210, AON6230, AON6232

Keywords - AON4807 MOSFET specs

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