AON6278 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON6278
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 632 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: DFN5X6

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AON6278 Datasheet (PDF)

..1. Size:318K 1
aon6278.pdf pdf_icon

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

..2. Size:318K aosemi
aon6278.pdf pdf_icon

8.1. Size:303K aosemi
aon6276.pdf pdf_icon

AON6276TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

8.2. Size:285K aosemi
aon6270.pdf pdf_icon

AON627075V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AON6270 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.1. Size:334K 1
aon6262e.pdf pdf_icon

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:295K 1
aon6250.pdf pdf_icon

AON6250150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6250 uses trench MOSFET technology that is 150Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 52Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.3. Size:323K 1
aon6234.pdf pdf_icon

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

9.4. Size:637K 1
aon6236.pdf pdf_icon

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.5. Size:265K 1
aon6298.pdf pdf_icon

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.6. Size:321K 1
aon6240.pdf pdf_icon

AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.7. Size:334K aosemi
aon6262e.pdf pdf_icon

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.8. Size:368K aosemi
aon6266.pdf pdf_icon

AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

9.9. Size:260K aosemi
aon6294.pdf pdf_icon

AON6294100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)

9.10. Size:287K aosemi
aon6246.pdf pdf_icon

AON624660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6246 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 80Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.11. Size:295K aosemi
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9.12. Size:263K aosemi
aon6292.pdf pdf_icon

AON6292100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6292 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.13. Size:237K aosemi
aon6232a.pdf pdf_icon

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.14. Size:248K aosemi
aon6230.pdf pdf_icon

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.15. Size:364K aosemi
aon6290.pdf pdf_icon

AON6290100V N-Channel MOSFETGeneral Description Product SummaryVDS 100VThe AON6290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.16. Size:239K aosemi
aon6206.pdf pdf_icon

AON620630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6206 uses trench MOSFET technology that is 30V24Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

9.17. Size:327K aosemi
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9.18. Size:270K aosemi
aon6282.pdf pdf_icon

AON628280V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6282 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.19. Size:271K aosemi
aon6284.pdf pdf_icon

AON628480V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6284 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 78Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.20. Size:295K aosemi
aon6224a.pdf pdf_icon

AON6224ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Logicl Level Driving RDS(ON) (at VGS=10V)

9.21. Size:265K aosemi
aon6248.pdf pdf_icon

AON624860V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6248 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 53Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.22. Size:295K aosemi
aon6280.pdf pdf_icon

AON628080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AON6280 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.23. Size:344K aosemi
aon6232.pdf pdf_icon

AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

9.24. Size:347K aosemi
aon6264e.pdf pdf_icon

AON6264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.25. Size:221K aosemi
aon6224.pdf pdf_icon

AON6224100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)

9.26. Size:567K aosemi
aon6264c.pdf pdf_icon

AON6264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.27. Size:287K aosemi
aon6242.pdf pdf_icon

AON624260V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AON6242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.28. Size:565K aosemi
aon6266e.pdf pdf_icon

AON6266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.29. Size:262K aosemi
aon6260.pdf pdf_icon

AON626060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6260 uses trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.30. Size:273K aosemi
aon6236.pdf pdf_icon

9.31. Size:265K aosemi
aon6298.pdf pdf_icon

9.32. Size:236K aosemi
aon6210.pdf pdf_icon

AON621030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6210 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)85Afrequency switching performance. Conduction and

9.33. Size:298K aosemi
aon6244.pdf pdf_icon

AON624460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO6244 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS =10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS =10V)

9.34. Size:324K aosemi
aon6220.pdf pdf_icon

AON6220TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

9.35. Size:331K aosemi
aon6268.pdf pdf_icon

AON6268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.36. Size:432K aosemi
aon6284a.pdf pdf_icon

AON6284ATM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

9.37. Size:257K aosemi
aon6204.pdf pdf_icon

AON620430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.38. Size:311K aosemi
aon6200.pdf pdf_icon

AON620030V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)

9.39. Size:330K aosemi
aon6226.pdf pdf_icon

AON6226TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.40. Size:236K aosemi
aon6202.pdf pdf_icon

AON620230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.41. Size:321K aosemi
aon6240.pdf pdf_icon

9.42. Size:1038K cn vbsemi
aon6246.pdf pdf_icon

AON6246www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

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