AON6278 Datasheet and Replacement
Type Designator: AON6278
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 85
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 632
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033
Ohm
Package:
DFN5X6
-
MOSFET ⓘ Cross-Reference Search
AON6278 Datasheet (PDF)
..1. Size:318K 1
aon6278.pdf 
AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
..2. Size:318K aosemi
aon6278.pdf
AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.1. Size:303K aosemi
aon6276.pdf
AON6276TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:285K aosemi
aon6270.pdf
AON627075V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AON6270 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.1. Size:334K 1
aon6262e.pdf
AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:295K 1
aon6250.pdf
AON6250150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6250 uses trench MOSFET technology that is 150Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 52Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.3. Size:323K 1
aon6234.pdf
AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
9.4. Size:637K 1
aon6236.pdf
AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.5. Size:265K 1
aon6298.pdf
AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.6. Size:321K 1
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.7. Size:334K aosemi
aon6262e.pdf
AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:368K aosemi
aon6266.pdf
AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:260K aosemi
aon6294.pdf
AON6294100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:287K aosemi
aon6246.pdf
AON624660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6246 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 80Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.11. Size:295K aosemi
aon6250.pdf
AON6250150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6250 uses trench MOSFET technology that is 150Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 52Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.12. Size:263K aosemi
aon6292.pdf
AON6292100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6292 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.13. Size:237K aosemi
aon6232a.pdf
AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:248K aosemi
aon6230.pdf
AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.15. Size:364K aosemi
aon6290.pdf
AON6290100V N-Channel MOSFETGeneral Description Product SummaryVDS 100VThe AON6290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.16. Size:239K aosemi
aon6206.pdf
AON620630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6206 uses trench MOSFET technology that is 30V24Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are
9.17. Size:327K aosemi
aon6234.pdf
AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
9.18. Size:270K aosemi
aon6282.pdf
AON628280V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6282 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.19. Size:271K aosemi
aon6284.pdf
AON628480V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6284 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 78Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.20. Size:295K aosemi
aon6224a.pdf
AON6224ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Logicl Level Driving RDS(ON) (at VGS=10V)
9.21. Size:265K aosemi
aon6248.pdf
AON624860V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6248 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 53Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.22. Size:295K aosemi
aon6280.pdf
AON628080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AON6280 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.23. Size:344K aosemi
aon6232.pdf
AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
9.24. Size:347K aosemi
aon6264e.pdf
AON6264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.25. Size:221K aosemi
aon6224.pdf
AON6224100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)
9.26. Size:567K aosemi
aon6264c.pdf
AON6264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.27. Size:287K aosemi
aon6242.pdf
AON624260V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AON6242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.28. Size:565K aosemi
aon6266e.pdf
AON6266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.29. Size:262K aosemi
aon6260.pdf
AON626060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6260 uses trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.30. Size:273K aosemi
aon6236.pdf
AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.31. Size:265K aosemi
aon6298.pdf
AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.32. Size:236K aosemi
aon6210.pdf
AON621030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6210 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)85Afrequency switching performance. Conduction and
9.33. Size:298K aosemi
aon6244.pdf
AON624460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO6244 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS =10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS =10V)
9.34. Size:324K aosemi
aon6220.pdf
AON6220TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
9.35. Size:331K aosemi
aon6268.pdf
AON6268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.36. Size:432K aosemi
aon6284a.pdf
AON6284ATM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
9.37. Size:257K aosemi
aon6204.pdf
AON620430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.38. Size:311K aosemi
aon6200.pdf
AON620030V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)
9.39. Size:330K aosemi
aon6226.pdf
AON6226TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.40. Size:236K aosemi
aon6202.pdf
AON620230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.41. Size:321K aosemi
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.42. Size:1038K cn vbsemi
aon6246.pdf
AON6246www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
Datasheet: AON6242
, AON6244
, AON6246
, AON6248
, AON6250
, AON6260
, AON6266
, AON6270
, 10N60
, AON6280
, AON6282
, AON6284
, AON6290
, AON6292
, AON6294
, AON6298
, AON6400
.
History: DMT6009LCT
| CS10N70FA9D
| IRF5210LPBF
| UTT6NP10G-S08-R
| SIA537EDJ
| SI1050X
| QM2N7002E3K1
Keywords - AON6278 MOSFET datasheet
AON6278 cross reference
AON6278 equivalent finder
AON6278 lookup
AON6278 substitution
AON6278 replacement
