AON6278. Аналоги и основные параметры
Наименование производителя: AON6278
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 632 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для AON6278
- подборⓘ MOSFET транзистора по параметрам
AON6278 даташит
..1. Size:318K 1
aon6278.pdf 
AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
..2. Size:318K aosemi
aon6278.pdf 
AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.1. Size:303K aosemi
aon6276.pdf 
AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:285K aosemi
aon6270.pdf 
AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.1. Size:334K 1
aon6262e.pdf 
AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:295K 1
aon6250.pdf 
AON6250 150V N-Channel MOSFET General Description Product Summary VDS The AON6250 uses trench MOSFET technology that is 150V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.3. Size:323K 1
aon6234.pdf 
AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are
9.4. Size:637K 1
aon6236.pdf 
AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.5. Size:265K 1
aon6298.pdf 
AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.6. Size:321K 1
aon6240.pdf 
AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.7. Size:334K aosemi
aon6262e.pdf 
AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:368K aosemi
aon6266.pdf 
AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:260K aosemi
aon6294.pdf 
AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:287K aosemi
aon6246.pdf 
AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.11. Size:295K aosemi
aon6250.pdf 
AON6250 150V N-Channel MOSFET General Description Product Summary VDS The AON6250 uses trench MOSFET technology that is 150V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.12. Size:263K aosemi
aon6292.pdf 
AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.13. Size:237K aosemi
aon6232a.pdf 
AON6232A 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:248K aosemi
aon6230.pdf 
AON6230 40V N-Channel MOSFET General Description Product Summary VDS The AON6230 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.15. Size:364K aosemi
aon6290.pdf 
AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.16. Size:239K aosemi
aon6206.pdf 
AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are
9.17. Size:327K aosemi
aon6234.pdf 
AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are
9.18. Size:270K aosemi
aon6282.pdf 
AON6282 80V N-Channel MOSFET General Description Product Summary VDS The AON6282 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.19. Size:271K aosemi
aon6284.pdf 
AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 78A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.21. Size:265K aosemi
aon6248.pdf 
AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.22. Size:295K aosemi
aon6280.pdf 
AON6280 80V N-Channel MOSFET General Description Product Summary VDS 80V The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.23. Size:344K aosemi
aon6232.pdf 
AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are
9.25. Size:221K aosemi
aon6224.pdf 
AON6224 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)
9.26. Size:567K aosemi
aon6264c.pdf 
AON6264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.27. Size:287K aosemi
aon6242.pdf 
AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.28. Size:565K aosemi
aon6266e.pdf 
AON6266E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.29. Size:262K aosemi
aon6260.pdf 
AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.30. Size:273K aosemi
aon6236.pdf 
AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.31. Size:265K aosemi
aon6298.pdf 
AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.32. Size:236K aosemi
aon6210.pdf 
AON6210 30V N-Channel MOSFET General Description Product Summary VDS The AON6210 uses trench MOSFET technology that is 30V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Conduction and
9.33. Size:298K aosemi
aon6244.pdf 
AON6244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS =10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS =10V)
9.34. Size:324K aosemi
aon6220.pdf 
AON6220 TM 100V Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
9.35. Size:331K aosemi
aon6268.pdf 
AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.36. Size:432K aosemi
aon6284a.pdf 
AON6284A TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
9.37. Size:257K aosemi
aon6204.pdf 
AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.38. Size:311K aosemi
aon6200.pdf 
AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)
9.39. Size:330K aosemi
aon6226.pdf 
AON6226 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.40. Size:236K aosemi
aon6202.pdf 
AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.41. Size:321K aosemi
aon6240.pdf 
AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.42. Size:1038K cn vbsemi
aon6246.pdf 
AON6246 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25
Другие MOSFET... AON6242
, AON6244
, AON6246
, AON6248
, AON6250
, AON6260
, AON6266
, AON6270
, IRFP260N
, AON6280
, AON6282
, AON6284
, AON6290
, AON6292
, AON6294
, AON6298
, AON6400
.
History: SI9410BDY
