AON6290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6290

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.4 V

Tiempo de elevación (tr): 5.5 nS

Conductancia de drenaje-sustrato (Cd): 415 pF

Resistencia drenaje-fuente RDS(on): 0.0046 Ohm

Empaquetado / Estuche: DFN5x6

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AON6290 Datasheet (PDF)

1.1. aon6290.pdf Size:364K _aosemi

AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.6mW switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 6.2mW extremely low combination o

4.1. aon6292.pdf Size:263K _aosemi

AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 6mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 8.5mΩ extremely low combinatio

4.2. aon6298.pdf Size:265K _aosemi

AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 16.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 21mΩ extremely low combinati

4.3. aon6294.pdf Size:260K _aosemi

AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS MV) technology 100V • Very Low RDS(ON) ID (at VGS=10V) 52A • Low Gate Charge RDS(ON) (at VGS=10V) < 10mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 14mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested •

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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