AON6290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6290
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 208 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 85 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3.4 V
Tiempo de elevación (tr): 5.5 nS
Conductancia de drenaje-sustrato (Cd): 415 pF
Resistencia drenaje-fuente RDS(on): 0.0046 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6290
AON6290 Datasheet (PDF)
1.1. aon6290.pdf 
Size:364K _aosemi
AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.6mW switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 6.2mW extremely low combination o
4.1. aon6294.pdf Size:260K _aosemi
AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS MV) technology 100V • Very Low RDS(ON) ID (at VGS=10V) 52A • Low Gate Charge RDS(ON) (at VGS=10V) < 10mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 14mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested •
4.2. aon6292.pdf Size:263K _aosemi
AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 6mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 8.5mΩ extremely low combinatio
4.3. aon6298.pdf Size:265K _aosemi
AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 16.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 21mΩ extremely low combinati
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
