AON6290 MOSFET Datasheet: N-Ch, 100V, 85A. Full specification with pinout and replacement list

AON6290 Specs and Replacement

Type Designator: AON6290

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: DFN5X6

AON6290 substitution

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AON6290 datasheet

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AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:263K aosemi
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AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒