AON6298 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6298
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 127 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6298 MOSFET
AON6298 Datasheet (PDF)
aon6298.pdf

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6298.pdf

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6294.pdf

AON6294100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
aon6292.pdf

AON6292100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6292 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
Otros transistores... AON6270 , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 , AON6292 , AON6294 , IRF9540 , AON6400 , AON6403 , AON6404 , AON6404A , AON6405 , AON6407 , AON6411 , AON6413 .
History: SQJ414EP
History: SQJ414EP



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