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AON6298 Specs and Replacement

Type Designator: AON6298

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 127 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: DFN5X6

AON6298 substitution

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AON6298 datasheet

 ..1. Size:265K  1
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AON6298

AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:265K  aosemi
aon6298.pdf pdf_icon

AON6298

AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:260K  aosemi
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AON6298

AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:263K  aosemi
aon6292.pdf pdf_icon

AON6298

AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6270, AON6278, AON6280, AON6282, AON6284, AON6290, AON6292, AON6294, 2N7000, AON6400, AON6403, AON6404, AON6404A, AON6405, AON6407, AON6411, AON6413

Keywords - AON6298 MOSFET specs

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