Справочник MOSFET. AON6298

 

AON6298 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON6298
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.5 ns
   Cossⓘ - Выходная емкость: 127 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для AON6298

 

 

AON6298 Datasheet (PDF)

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 aon6298.pdf

AON6298 AON6298

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:265K  aosemi
 aon6298.pdf

AON6298 AON6298

AON6298100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6298 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.1. Size:260K  aosemi
 aon6294.pdf

AON6298 AON6298

AON6294100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:263K  aosemi
 aon6292.pdf

AON6298 AON6298

AON6292100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON6292 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:364K  aosemi
 aon6290.pdf

AON6298 AON6298

AON6290100V N-Channel MOSFETGeneral Description Product SummaryVDS 100VThe AON6290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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