AON6414A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6414A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET AON6414A
AON6414A Datasheet (PDF)
aon6414a.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414al.pdf
AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and
aon6414al.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414.pdf
AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Otros transistores... AON6400 , AON6403 , AON6404 , AON6404A , AON6405 , AON6407 , AON6411 , AON6413 , STP75NF75 , AON6416 , AON6424 , AON6426 , AON6428 , AON6435 , AON6440 , AON6442 , AON6444 .
History: SI5404BDC
History: SI5404BDC
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