AON6414A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6414A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: DFN5X6
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AON6414A datasheet
aon6414a.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414al.pdf
AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and
aon6414al.pdf
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414.pdf
AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Otros transistores... AON6400, AON6403, AON6404, AON6404A, AON6405, AON6407, AON6411, AON6413, AON7408, AON6416, AON6424, AON6426, AON6428, AON6435, AON6440, AON6442, AON6444
Parámetros del MOSFET. Cómo se afectan entre sí.
History: JMSL0615AGDQ | JMH65R430AK | AGM1405F | AP10H04DF | NCE4435X | STP160N75F3
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