AON6414A MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6414A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DFN5X6
AON6414A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6414A Datasheet (PDF)
aon6414a.pdf
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AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414al.pdf
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AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and
aon6414al.pdf
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AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6414.pdf
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AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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