AON6440 Todos los transistores

 

AON6440 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6440

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 780 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: DFN5X6

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AON6440 datasheet

 ..1. Size:262K  aosemi
aon6440.pdf pdf_icon

AON6440

 8.1. Size:305K  aosemi
aon6442.pdf pdf_icon

AON6440

AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.2. Size:273K  aosemi
aon6448.pdf pdf_icon

AON6440

AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.3. Size:264K  aosemi
aon6444.pdf pdf_icon

AON6440

AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

Otros transistores... AON6411 , AON6413 , AON6414A , AON6416 , AON6424 , AON6426 , AON6428 , AON6435 , K3569 , AON6442 , AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 .

History: IRFE420

 

 

 


 
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