AON6440 Datasheet and Replacement
Type Designator: AON6440
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: DFN5X6
AON6440 substitution
AON6440 Datasheet (PDF)
aon6440.pdf

AON644040V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 40VThe AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6442.pdf

AON644240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6442 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 32Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6448.pdf

AON644880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6444.pdf

AON644460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 60VThe AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
Datasheet: AON6411 , AON6413 , AON6414A , AON6416 , AON6424 , AON6426 , AON6428 , AON6435 , SPP20N60C3 , AON6442 , AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 .
Keywords - AON6440 MOSFET datasheet
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