AON6444 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6444
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 81 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.2 nS
Cossⓘ - Capacitancia de salida: 470 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AON6444 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6444 datasheet
aon6444.pdf
AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aon6442.pdf
AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6448.pdf
AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
Otros transistores... AON6414A , AON6416 , AON6424 , AON6426 , AON6428 , AON6435 , AON6440 , AON6442 , 4435 , AON6448 , AON6450 , AON6452 , AON6454A , AON6458 , AON6482 , AON6484 , AON6486 .
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