AON6444
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6444
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 81
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 4.2
nS
Cossⓘ -
Output Capacitance: 470
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
DFN5X6
AON6444
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6444
Datasheet (PDF)
..1. Size:264K aosemi
aon6444.pdf
AON644460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 60VThe AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
8.1. Size:305K aosemi
aon6442.pdf
AON644240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6442 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 32Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.2. Size:262K aosemi
aon6440.pdf
AON644040V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 40VThe AON6440 is fabricated with SDMOSTM trench ID (at VGS=10V) 85Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
8.3. Size:273K aosemi
aon6448.pdf
AON644880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
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