AON6508 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6508
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 41 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 32 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.2 V
Tiempo de elevación (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 898 pF
Resistencia drenaje-fuente RDS(on): 0.0032 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6508
AON6508 Datasheet (PDF)
1.1. aon6508.pdf 
Size:204K _aosemi
AON6508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.2mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in
4.1. aon6504.pdf Size:206K _aosemi
AON6504 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.1mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 3.2mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i
4.2. aon6502.pdf Size:276K _aosemi
AON6502 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.2mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 2.7mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i
4.3. aon6500.pdf Size:275K _aosemi
AON6500 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.95mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 1.3mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters
4.4. aon6506.pdf Size:291K _aosemi
AON6506 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 36A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.6mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
